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A physical RC network model for electro-thermal analysis of a multichip SiC power module

机译:用于多芯片SiC电源模块电热分析的物理RC网络模型

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摘要

This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half bridge, two-level SiC power module with 6 MOSFETs and can be used for coupled electro-thermal simulation. The finite element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical RC network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the 6 MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electro-thermal simulation to predict the power losses and junction temperatures of the 6 MOSFETs under switching frequencies from 5 kHz to 100 kHz which demonstrate the good electro-thermal performance of the designed power module.
机译:本文关注的热模型可以物理地反映具有6个MOSFET的轻型三相半桥,两级SiC功率模块中的热流路径,并且可以用于耦合电热仿真。首先对有限元(FE)模型进行评估和校准,以提供用于建立物理RC网络模型的原始数据。实验证明,通过将水冷却器作为有限元模型中的热交换边界,可以令人满意地描述安装在水冷却器上的模块的冷却条件。构建了一个紧凑的RC网络,该网络由115个R和C参数组成,以预测6个MOSFET的瞬态结温度,其中MOSFET之间的交叉加热效应用横向热敏电阻表示。专门开发了一种三步曲线拟合方法,以克服从选定的有限元仿真结果中提取RC网络的R和C值的难题。所建立的紧凑型RC网络模型可以与功率模块中的结构和热流路径进行物理关联,并可以在实际开关条件下使用功率模块的FE仿真结果对其进行评估。它还被集成到LTspice模型中,以执行耦合的电热仿真,以预测在5kHz至100kHz的开关频率下6个MOSFET的功率损耗和结温,这证明了所设计功率模块的良好电热性能。 。

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